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Shenzhen Wonder-Chip Electronics Company Limited
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TH58BYG3S0HBAI6

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TH58BYG3S0HBAI6

Supply Current - Max : 30 mA

Product Category : Flash Memory

Memory Type : NAND

Mounting Style : SMD/SMT

Supply Voltage - Max : 1.95 V

Memory Size : 8 Gbit

Packaging : Tray

Supply Voltage - Min : 1.7 V

Package / Case : FBGA-67

Series : TH58BYG3S0

Interface Type : Parallel

Operating Temperature Range : - 40 C to + 85 C

Speed : 25 ns

Manufacturer : Toshiba

Description : Flash Memory 8 GBIT CMOS NAND EEPROM

Stock : In Stock

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The TH58BYG3S0HBAI6,from Toshiba,is Flash Memory.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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